By Malcolm E. Goodge (auth.)
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And recomb. 58) is the lifetime of excess electrons. llb). The excess electron density at plane 1 is an 40 Semiconductor Device Technology excess electron density iln at plane 1 X (a) plane 2 plane 1 ........ 43 the current density at this plane due to excess electron drift is tlne~J-nE and the current leaving the volume is therefore tlne~J-nEA where A is the cross-sectional area of the element. llc and so the current entering the volume is (tln + o(tln)) efLnEA. llc) causes a net increase of electrons in the volume since the rate of diffusion into the volume at plane 2 is greater than the rate of diffusion out of the volume at plane 1.
S (n-type) or
I I : : I o I I I f ---+---~-1 .... 4b) being occupied (P(Wc)) and the number of available levels in the CB. 17) Semiconductor Physics 23 the approximation being valid for most intrinsic and lightly doped semiconductors as We - WF P kT making the exponential term dominant. 18) The hole density p may be considered in a similar way. 4b) being occupied by an electron is P(Wv). 19) noting that WF - Wv P kT for most intrinsic and lightly doped semiconductors. 12, n; and p; are equal. 21) assuming Ne = Nv.