Semiconductor Device Technology by Malcolm E. Goodge (auth.)

By Malcolm E. Goodge (auth.)

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And recomb. 58) is the lifetime of excess electrons. llb). The excess electron density at plane 1 is an 40 Semiconductor Device Technology excess electron density iln at plane 1 X (a) plane 2 plane 1 ........ 43 the current density at this plane due to excess electron drift is tlne~J-nE and the current leaving the volume is therefore tlne~J-nEA where A is the cross-sectional area of the element. llc and so the current entering the volume is (tln + o(tln)) efLnEA. llc) causes a net increase of electrons in the volume since the rate of diffusion into the volume at plane 2 is greater than the rate of diffusion out of the volume at plane 1.

S (n-type) or m > s (p-type), the charge redistribution results in similar CB energies on either side of the junction so that free (CB) electrons can flow across the junction in either direction. Such junctions are described as ohmic and are used to form the contacts between the semiconductor chip and the external connecting leads in semiconductor devices and ICs. For simplicity, only metal/n-type semiconductor junctions are considered below but a corresponding explanation applies to the p-type case taking account of the different Fermi energy involved.

I I : : I o I I I f ---+---~-1 .... 4b) being occupied (P(Wc)) and the number of available levels in the CB. 17) Semiconductor Physics 23 the approximation being valid for most intrinsic and lightly doped semiconductors as We - WF P kT making the exponential term dominant. 18) The hole density p may be considered in a similar way. 4b) being occupied by an electron is P(Wv). 19) noting that WF - Wv P kT for most intrinsic and lightly doped semiconductors. 12, n; and p; are equal. 21) assuming Ne = Nv.

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