By Mark R. Hornung, Oliver Brand
Micromachined Ultrasound-Based Proximity Sensors offers a packaged ultrasound microsystem for item detection and distance metering in response to micromachined silicon transducer components. It describes the characterization, optimization and the long term balance of silicon membrane resonators in addition to acceptable packaging for ultrasound microsystems.
Micromachined Ultrasound-Based Proximity Sensors describes a cheap method of the conclusion of a micro electro mechanical approach (MEMS). The micromachined silicon transducer parts have been fabricated utilizing commercial IC expertise mixed with commonplace silicon micromachining suggestions. also, this procedure permits the cointegration of the riding and read-out circuitry. to make sure the commercial applicability of the fabricated transducer components extensive long term balance and reliability checks have been played less than quite a few environmental stipulations corresponding to hot temperature and humidity.
nice attempt was once undertaken to enquire the packaging and housing of the ultrasound approach, which normally ensure the good fortune or failure of an business microsystem. A low-stress mounting of the transducer aspect minimizes thermomechanical pressure affects. The built housing not just protects the silicon chip but additionally improves the acoustic functionality of the transducer components.
The constructed ultrasound proximity sensor process can make certain item distances as much as 10 cm with an accuracy of higher than 0.8 mm.
Micromachined Ultrasound-Based Proximity Sensors may be of curiosity to MEMS researchers in addition to these enthusiastic about solid-state sensor development.
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Extra info for Micromachined Ultrasound-Based Proximity Sensors
I 35 1-. esl fjh b as a function of the membrane length. (b) Frequency IhO at buckling height hb = 0 vs. membrane side length I. 1. 34 Micromachined Ultrasound-Based Proximity Sensors Mode Shapes of Membrane Resonator quality factor which slightly varies due to inhomogenities in the membrane thickness. Membranes with a buckling height between two and three micrometers exhibit the largest vibration amplitudes. 3) just starts to increase with decreasing silicon thickness. With increased buckling height the vibration amplitude drastically decreases.
Which is proportional to [2 times j2 (see Eqn. 11). is approximately the same for both resonators because the smaller side length of the AMS transducer is compensated by its slightly larger resonance frequency. The excitation efficiency. • the vibration amplitude per dynamical heating power Pdynl' is the same for both resonators although the quality factor is higher for the AMS transducer. The sensitivity of the piezoresistive detection differs because of the different diffusion depth and doping concentration of the piezoresistors.
2 of the slope t1f/t1h b as a function of the membrane side length is slightly smaller than the value of -2 calculated for a multilayered, prestressed, elastically clamped plate in . , the non-ideal behavior is more pronounced for smaller membranes. 1) the vibration amplitude is measured step by step all over the vibrating structure. 1. The membrane resonator is moved in steps of 50 ~m in front of the laser beam using the computer controlled x-y translational stages. 6 displays the measured mode shape of the fundamental resonance at 64 kHz.