By E. W. Williams
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Additional resources for Luminescence and the Light Emitting Diode. The Basics and Technology of LEDS and the Luminescence Properties of the Materials
24). 3, Chapter 2) means that blue-violet through to red LEDs might be possible. For the preparation of Gai_ x In x N a mixture of Ga and In was placed inside a watercooled anode. c. discharge. The metal mixture in the anode was heated by electron bombardment and reacted with nitrogen. During the reaction the semiconductor alloy was deposited on sapphire (OOOl) orientated substrates. 8 CONCLUSION In conclusion a few words should be said about the relative costs of these various crystal-growth methods.
10' 1 1 1 1 1 11 1 1 I02 L, J Temperature (°K) Fig. 23. Temperature dependence of the mobility of GaAs for several high purity samples. (After Wolfe and Stillman, 1970) (Ref. 43) For intentionally doped n-type GaAs normally used for the fabrication of LEDs, the temperature dependence of the theoretical mobility is not in good agreement with experimental results. In order to reduce the discrepancy a "mobility-killer" scattering mechanism (Ref. 47) with a T"^ o r τ~1·5 dependence on temperature has been proposed although the nature of this "killer" has not been determined.
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