Ion Implantation in Semiconductors and Other Materials by W. Frank (auth.), Billy L. Crowder (eds.)

By W. Frank (auth.), Billy L. Crowder (eds.)

During the years because the first convention during this sequence used to be held at Thousand Oaks, California, in 1970, ion implantation has been an increasing and interesting study zone. The advances during this box have been so quick moment convention convened at Garmisch­ Partenkirchen, Germany, in 1971. today, our less than­ status of the ion implantation approach in semiconductors similar to Si and Ge has reached a degree of adulthood and ion implantation suggestions are firmly verified in semiconductor machine expertise. The advances in compound semiconductors haven't been as quick. There has additionally been a shift in emphasis in ion implanta­ tion learn from semiconductors to different fabrics equivalent to metals and insulators. It used to be applicable to extend the scope of the convention and the IIIrd overseas convention on Ion Implanta­ tion in Semiconductors and different fabrics was once held at Yorktown Heights, ny, December eleven to fourteen, 1972. an important variety of the papers offered at this convention handled ion implanta­ tion in metals, insulators, and compound semiconductors. The foreign Committee answerable for organizing this convention consisted of B. L. Crowder, J. A. Davies, F. H. Eisen, Ph. Glotin, T. Itoh, A. U. MacRae, J. W. Mayer, G. Dearnaley, and that i. Ruge. The convention attracted one hundred eighty members from twelve international locations. The luck of the convention used to be due in huge degree to the monetary aid of our sponsors, Air strength Cambridge study Laboratories and the place of work of Naval Research.

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We have studied ~he depth distribution of the amorphous defect centers produced by P ion-implanted silicon using an EPR spectrometer and observed an effect which we consider as due to the strain produced by the implantation. EXPERIMENTAL PROCEDURES The substrates for implantation were p-type, 35 ~-cm silicon wafers with (Ill) surface chemicall+ polished. Specimens were implanted with 1014, 1015 and 10 16 P ions/cm 2 at energies between 50 and 400 keV at room temperature. Silicon layers were removed in small increments by anodization in an electrolyte of saturated solution of oxalic acid.

S. Berry, Ane1astic Relaxation in Cr;y:sta1line Solids, Academic Press, New York (1972). 3. Ref. 2, p. 52-57. 4. Ref. 2, p. 192. 5. Ref. 2, p. 284-288. 6. Ref. 2, p. 597. 7. Ref. 2, p. 176-180. 8. A. Seeger and W. Frank, Proceedings of the International Conference on Defects in Semiconductors, Reading, 1972, p. 262. 9. M. Cherki and A. H. Ka1ma, Phys. Rev. B1, 647 (1970). 10. J. C. North and W. M. Gibson, App1. Phys. Letters 16, 126 (1970). 30 RADIATION DAMAGE 11. B. L. Crowder, J. F. Ziegler, F.

W. F. J. Frank and B. S. Berry, to be published. STRAIN INDUCED EFFECTS ON EPR CENTERS IN SILICON GENERATED BY p+ ION IMPLANTATION T. Matsumori, T. Kobayashi, H. Maekawa and T. Izumi Department of Electronic Engineering, Faculty of Engineering, Tokai University, Shibuya, Tokyo, Japan ABSTRACT Damage distribution in silicon generated by p+ ion implantation was measured by EPR method. It became clear that the peak position of the distribution of the paramagnetic defect center is always located at about 2/3 of the projected range Rp, where 6Hmsl of the signal begins to increase due to the release of the exchange narrowing effect.

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