By Takashi Hirao, Kaoru Inoue, Shigetoshi Takayanagi, Yuki Yaegashi (auth.), Fred Chernow, James A. Borders, David K. Brice (eds.)
The 5th overseas convention on Ion Implantation came about in Boulder, Colorado among the ninth and thirteenth of August 1976. Papers have been brought by means of scientists and engineers from 15 international locations, and the attendees represented 19 international locations. As has develop into the customized at those meetings, the classes have been excessive with the espresso breaks and evenings given to casual conferences one of the individuals. It was once a time to resume previous friendships, commence new ones, trade rules, individually query authors of papers that seemed within the literature because the final convention and discover what used to be normally taking place in Ion Implantation. in recent times it has beome more challenging to get investment to trip to such conferences. to aid the engaging authors monetary reduction was once solicited from and the workplace of Naval learn. we're so much thankful for his or her confident reaction to our requests. The good fortune of the convention used to be partly because of their beneficiant contributions. this system Committee had the sorrowful job of the reviewing of greater than one hundred seventy abstracts. the results of their labors was once really worth their attempt. a lot thank you is going to them for molding the convention into a correct illustration of actions within the box. behind the curtain in Boulder, neighborhood preparations have been dealt with ably via Graeme Eldridge. the trouble of this job can't be overemphasized. Our because of him for a task good done.
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Extra info for Ion Implantation in Semiconductors 1976
12. 13. 14. HEFERENCES G. H. S. Nelson and J. Stephen, "Ion Implantation", (North Holland) (1973). E. Davies, App. Phy. , 14,227 (1969). G. Blamires, Proc. Eur. Conf:-on Ion Implantation (Peregrinus), 52 (1970). M. R. Booker, Rad. Effects 6, 33 (1970). J. S. S. Barnes, Phil. ~g. 17,1145, (1968) • H. Muller, H. Ryssel and I. Ruge, "Ion Implantation in Semiconductorsll, Ed. Ruge and J • Graul (Springer-Verlag), 85, (1971) L. A. E. W. ~yer, J. Appl. , 40,842 (1969). A. Moore, G. W. Tinsley, Rad. Effects, 25, 49, (1975).
Two regions of interest can be identified: the reverse annealing stage around 500°C, similar to other group III impurities, and the high temperature region where the electrical conductivity reaches a maximum saturation value corresponding to a maximum number of active indium impurities and a minimum concentration of compensating defect centres. In this paper we concentrate on this latter region: annealing at 940°C. 2. RESULTS AND DISCUSSION Figure 2 shows backscattering spectra for a -5 x 1014 cm- 2 100 keY indium implant into (111) silicon, before and after annealing (R = 460 A).
Special care was taken to the reference samples: all samples were partly masked against ions and the implanted and non-implanted parts were not separated throughout. To detect oxide thicknesses two closely adjacent points were chosen. To cross-check homogeneity, some extra reference samples were also oxidized at the same time. If preanneals were made, usually ssooe, 3 hr was chosen in dry N2 to achieve full regrowth (S). In some cases, gOOOe 30 minutes preanneal in dry N2 gas was applied. To analyze oxide layers, mostly nuclear methods were applied.