By R. N. Bhargava (auth.), T. C. McGill, C. M. Sotomayor Torres, W. Gebhardt (eds.)
This quantity comprises the complaints of the NATO complicated learn Workshop on "Growth and Optical houses of broad hole II-VI Low Dimensional Semiconductors", held from 2 - 6 August 1988 in Regensburg, Federal Republic of Germany, below the auspices of the NATO foreign medical alternate Programme. Semiconducting compounds shaped through combining a component from column II of the periodic desk with a component from column VI (so referred to as II-VI Semiconductors) have lengthy promised many optoelectronic units working within the obvious zone of the spectrum. besides the fact that, those fabrics have encountered various difficulties together with: huge variety of defects and problems in acquiring p- and n-type doping. Advances in new equipment of fabric practise could carry the major to unlocking the unfulfilled supplies. throughout the workshop an entire consultation was once taken up overlaying the clients for wide-gap II-VI Semiconductor units, really gentle emitting ones. the expansion of bulk fabrics was once reviewed with the view of contemplating II-VI substrates for the unconventional epitaxial innovations comparable to MOCVD, MBE, ALE, MOMBE and ALE-MBE. The managed advent of impurities in the course of non-equilibrium development to supply keep an eye on of the doping kind and conductivity was once emphasized.
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Extra resources for Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors
Bucher, p-ZnSe/n-GaAs heterojunctions for blue electroluminescent cells, Proceedings of the 18th International Conference on the Physics of Semiconductors 1:223 (1986). 0. McCaldin T. J. , Laboratory of Applied Physics California Institute of Technology Pasadena, California 91125 The difficulty of making pn junctions by conventional processing in the wider band-gap II-VIs has been attacked over the years in several ways. One way, which is the subject of this paper, is to join a p-type II-VI to an n-type II-VI to form a heterojunction (HJ).
E. as not an energy barrier. :lEe and hence not act as a barrier. Usually this part of the band bending is relatively small, since the smaller gap material is the more heavily doped. We will not consider it further in the following discussion. Thus, in this type I example, current injection into the smaller gap material is favored and indeed is limited only by the factors mentioned above for homojunctions. 1-4>P ~. Ev Fp Ip a FIG. 1. ~ ~IP b c pn junctions under forward bias. Ee is conduction band edge, Ev valence band edge, EFn and E Fp are quasi-Fermi levels in nand p material, respectively, in and ip are majority carrer currents originating in n and p material.
Similar conclusions are reached by FW 13 and EKll. Yet other predictions, which do not treat all of the 4 possible barriers, reach only pessimistic conclusions for the cases they do treat. :·~ :I. 1:'. 1:. W'~ ««<:::::::::}:;: RMW. :. : .. : . ". 5 FIG. 6. 48 n-ZnSe p-ZnTe n-CdSe Energy relationships reported for ZnSe, ZnTe and edSe. Zero of energy is arbitrarily set at Ev(ZnTe). Stipling denotes energy ranges which do not permit substantial forward injection currents, as discussed in text. Arrows next to current symbols indicate OAeV range discussed in text.