Gallium Arsenide Digital Circuits by Omar Wing (auth.)

By Omar Wing (auth.)

Gallium Arsenide expertise has come of age. GaAs built-in circuits can be found at the present time as gate arrays with an working velocity in far more than one Gigabits according to moment. unique goal GaAs circuits are utilized in optical fiber electronic communications platforms for the aim of regeneration, multiplexing and switching of the optical indications. As advances in fabrication and packaging concepts are made, the operat­ ing pace will additional elevate and the price of construction will achieve some degree the place huge scale program of GaAs circuits could be within your means in those and different structures the place velocity is paramount. This e-book is written for college students and engineers who desire to input into this new box of electronics for the 1st time and who desire to embark on a major examine of the topic of GaAs circuit layout. No past wisdom of GaAs expertise is thought even though a few prior event with MOS circuit layout should be priceless. an exceptional a part of the booklet is dedicated to circuit research, to the level that's attainable for non­ linear circuits. The circuit version of the GaAs transistor is derived from first rules and analytic formulation precious in predicting the approxi­ mate circuit functionality also are derived. computing device simulation is used in the course of the publication to teach the predicted functionality and to review the results of parameter variations.

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Is determined by a one-dimensional Poisson's equation. In Region II, the longitudinal field is no longer small and a two-dimension description of the potential is required. Consider Region I first. With the electron velocity given by Eq. 12) Let Vc be the channel voltage at x=Lc . Separating variables in Eq. 3. 15b) In Eq. 13), Le and Ve are unknown. We will derive expressions relating the two when we consider Region II. Long-Channel, Low-Field Approximation If the channel is long (gate length is large compared to the thickness of the active layer) and the drain voltage is low, the electric field along the channel never reaches the value Ee.

The longitudinal current I(x) is the drift current which depends on the electron velocity. J a _ 1 [~(Vbi _ VGS + V(x) qND i/} _I(x) J Ep Eqs. 6) constitute a system of coupled differential equations in the unknowns lex) and V (x). In principle, we can solve the GaAs Digital Circuits 38 equations once the boundary conditions are specified, which are V (Lc) =Ve and V (0) =Vs =O. As before, Lc is the point along the channel where the electron velocity equals the saturation velocity and the longitudinal electric field reaches Ee.

11) Eq. 12) IDS =Ic +IGC This suggests an equivalent circuit given in Fig. 13) Is IDS Fig. 2 Equivalent circuit of two-region model of MESFET including gate current. Integration ofEq. 14) Ep If V (x) is known for O:s; x :s; L, IGC can be evaluated (in principle at least), and I~D can be detennined from the second tenn of Eq. 7) for Region II. Since IDS is detennined once Lc and Vcs are found, the source current Is is detennined from Eq. 17) Note that Vex) satisfies the boundary conditions that V (0) = 0 and VeL) = VDS.

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