GaAs Devices and Circuits by Michael S. Shur

By Michael S. Shur

GaAs units and built-in circuits have emerged as top contenders for ultra-high-speed functions. This ebook is meant to be a reference for a swiftly starting to be GaAs neighborhood of researchers and graduate scholars. It was once written over numerous years and elements of it have been used for classes on GaAs units and built-in circuits and on heterojunction GaAs units built and taught on the college of Minnesota. many of us helped me in penning this publication. i want to precise my deep gratitude to Professor Lester Eastman of Cornell collage, whose principles and options encouraged me and helped to figure out the course of my study paintings for a few years. I additionally benefited from various discussions together with his scholars and colleagues and from the very surroundings of the pursuit of excellence which exists in his staff. i want to thank my former and current co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and know-how, Professor Melvin Shaw of Wayne nation collage, Dr. Kastalsky of Bell Communi­ cations, Professor Gary Robinson of Colorado country collage, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint study and for priceless discussions. My unique because of Professor Morko.;, for his support, his principles, and the instance set via his pioneering paintings. when you consider that 1978 i've been operating with engineers from Honeywell, Inc.-Drs.

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And Na is the acceptor density. uniform sampie kept at constant temperature the Boltzmann equation (2-2-3) becomes (2-5-2) so that the distribution function in a low electric field may be found. Here electron velocity in state k: Vk is the Once l' is known, the current density j may be calculated as (2-5-3) Here dVk is the infinitesimal volume in the k space and the integration is over the Brillouin zone. For the simple case of nondegenerate statistics and parabolic spherical bands (2-5-4) where energy E is measured from the bottom of the conduction band, n is the electron concentration, k B is the Boltzmann constant, T is the lattice temperature, and Ne is the density of states in the conduction band.

J :: 10 ,---------........ UJ FIGURE 2-3-1. Energy dependence of the polar scattering rate in the (000) valley of GaAs at 300 K, (a) including both nonparabolicity and the wave vector dependence of G(k, k') (solid curve), (b) including only the nonparabolicity of the band (broken curve), (c) for a parabolic band (dotted curve [18]). 5 2. '".. 5 ENERGY (eV) FI GURE 2-3-2. Energy dependence of the polar scattering rate (emission, absorption, and combined) in the (000) minimum of GaAs at 300 K (for a parabolic band).

2-5-6 [15]. The dependenee of the hole mobility on the hole eoneentration is reprodueed in Fig. 2-5-7 [15]. The eleetron drift velocity in high eleetrie fields has been diseussed in Seetion 2-4 in regard to the results of the Monte Carlo simulation (see Figs. 2-4-7 and 500 -;;; > ..... 400 N 0 ::;; I T = 300 K . ~i'~ ~ a: ' c 300 • b I ::l 0 • c Qo", 200 0 >al 0 o~ 0 f- -' . 100 ' ::;; -' -'

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