Electronics by Roger Francis Bridgman

By Roger Francis Bridgman

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Moncaster M. , and Starkiewicz J. , Akasaki I. “P-type conduction in Mg-doped GaN treated with lowenergy electron beam irradiation (LEEBI)” Jpn. J. Appl. Phys. 28, L2112 (1989) Chang S. , Chang C. , Su Y. , Chang P. , Wu Y. , Huang K. H. and Chen T. P. “AlGaInP multiquantum well light-emitting diodes” IEE Proc. Optoelectronics 144, 1 (1997) Chang S. J. and Chang C. S. “AlGaInP–GaInP compressively strained multiquantum well light-emitting diodes for polymer fiber applications” IEEE Photonics Technol.

And Frosch C. J. “Isoelectronic traps due to nitrogen in gallium phosphide” Phys. Rev. Lett. 15, 857 (1965) Violin E. , Kalnin A. , Pasynkov V. , Tairov Y. , and Yaskov D. A. “Silicon Carbide – 1968” 2nd International Conference on Silicon Carbide, published as a special issue of the Materials Research Bulletin, p. 231 (1969) Welker H. “On new semiconducting compounds (translated from German)” Zeitschrift für Naturforschung 7a, 744 (1952) Welker H. “On new semiconducting compounds II (translated from German)” Zeitschrift für Naturforschung 8a, 248 (1953) Wolfe C.

Statistics of the recombinations of holes and electrons” Phys. Rev. 87, 835 (1952) Tu L. , Kuo W. , Lee K. , Tsao P. , and Lai C. , Chu A. , and Sheu J. K. “High-dielectricconstant Ta2O5 / n-GaN metal-oxide-semiconductor structure” Appl. Phys. Lett. 77, 3788 (2000) 47 3 Theory of radiative recombination In this chapter, the theory of radiative recombination is first discussed in terms of a rigorous quantum mechanical model. Subsequently recombination is discussed in terms of a semiclassical model based on equilibrium generation and recombination.

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