By Yutaka Yoshida, Guido Langouche
This e-book emphasizes the significance of the attention-grabbing atomistic insights into the defects and the impurities in addition to the dynamic behaviors in silicon fabrics, that have develop into extra without delay obtainable over the last twenty years. Such growth has been made attainable by way of newly built experimental equipment, first precept theories, and desktop simulation techniques.
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Extra resources for Defects and Impurities in Silicon Materials: An Introduction to Atomic-Level Silicon Engineering
2 Mathematical Formulation of Dopant Diffusion The formation of substitutional shallow dopants to concentrations exceeding the intrinsic carrier concentration give rise to an electric field that affects the diffusion of charged mobile defects. Accordingly, a drift of charged defects in the electric field must be added to Eq. 92) and denote the mobility and the electric field, respectively. 95) Substituting Eq. 95) in Eq. 98) where p denotes the free hole concentration. Additional terms enter Eq.
86) are also mathematically equivalent, since a mobile dopant defect and isolated native defect on the left hand side of the reactions transform to Am s . This similarity between the reaction mechanisms indicates that q dopant diffusion alone can hardly distinguish between AV j , AI v , and Ai . However, dopant diffusion in isotope heterostructures can, in principle, differentiate between interstitial foreign-atoms and dopant-defect pairs, because the latter defects also contribute to self-diffusion.
102) where CX (DX ) with X 2 fAms ; AV j ; V k g is the concentration (diffusion coefficient) of the respective point defect. DAs m equals the diffusivity of the substitutionally dissolved foreign atom via direct exchange. D 5 1022 cm 3 for Si) is the number density of substitutional lattice sites. 102) describes the change of the concentration of the point defect via diffusion and drift. 99). 40 H. inj m k/ kC D eq s V eq . inj m k/ eAVj nQ . inj m k/ eAVj nQ . j C m k/ eq m k/ eAVj nQ . j C m k/ !