Defects and Impurities in Silicon Materials: An Introduction by Yutaka Yoshida, Guido Langouche

By Yutaka Yoshida, Guido Langouche

This e-book emphasizes the significance of the attention-grabbing atomistic insights into the defects and the impurities in addition to the dynamic behaviors in silicon fabrics, that have develop into extra without delay obtainable over the last twenty years. Such growth has been made attainable by way of newly built experimental equipment, first precept theories, and desktop simulation techniques. 

The ebook is aimed toward younger researchers, scientists, and technicians in similar industries. the most reasons are to supply readers with 1) the elemental physics in the back of defects in silicon fabrics, 2) the atomistic modeling in addition to the characterization ideas concerning defects and impurities in silicon fabrics, and three) an summary of the big variety of the learn fields involved.

Show description

Read or Download Defects and Impurities in Silicon Materials: An Introduction to Atomic-Level Silicon Engineering PDF

Similar semiconductors books

Semiconductor Quantum Optics

Optical communications know-how is turning out to be more and more in value, with a fast velocity of improvement. cutting edge optical units have emerged from the mixing of semiconductor laser diodes with optical waveguide know-how. This well-researched textual content strains the evolution of semiconductor laser amplifiers (SLAs) from those applied sciences.

Advanced Gate Stacks for High-Mobility Semiconductors

Will nanoelectronic units proceed to scale in accordance with Moore’s legislation? At this second, there's no effortless solution due to the fact that gate scaling is swiftly rising as a major roadblock for the evolution of CMOS expertise. Channel engineering in accordance with high-mobility semiconductor fabrics (e. g. strained Si, substitute orientation substrates, Ge or III-V compounds) might support conquer the hindrances considering that they give functionality enhancement.

Complex Plasmas: Scientific Challenges and Technological Opportunities

This ebook offers the reader with an advent to the physics of complicated plasmas, a dialogue of the explicit clinical and technical demanding situations they current and an summary in their capability technological functions. complicated plasmas range from traditional high-temperature plasmas in numerous methods: they might comprise extra species, together with nano meter- to micrometer-sized debris, unfavorable ions, molecules and radicals they usually could show powerful correlations or quantum results.

Extra resources for Defects and Impurities in Silicon Materials: An Introduction to Atomic-Level Silicon Engineering

Example text

2 Mathematical Formulation of Dopant Diffusion The formation of substitutional shallow dopants to concentrations exceeding the intrinsic carrier concentration give rise to an electric field that affects the diffusion of charged mobile defects. Accordingly, a drift of charged defects in the electric field must be added to Eq. 92) and denote the mobility and the electric field, respectively. 95) Substituting Eq. 95) in Eq. 98) where p denotes the free hole concentration. Additional terms enter Eq.

86) are also mathematically equivalent, since a mobile dopant defect and isolated native defect on the left hand side of the reactions transform to Am s . This similarity between the reaction mechanisms indicates that q dopant diffusion alone can hardly distinguish between AV j , AI v , and Ai . However, dopant diffusion in isotope heterostructures can, in principle, differentiate between interstitial foreign-atoms and dopant-defect pairs, because the latter defects also contribute to self-diffusion.

102) where CX (DX ) with X 2 fAms ; AV j ; V k g is the concentration (diffusion coefficient) of the respective point defect. DAs m equals the diffusivity of the substitutionally dissolved foreign atom via direct exchange. D 5 1022 cm 3 for Si) is the number density of substitutional lattice sites. 102) describes the change of the concentration of the point defect via diffusion and drift. 99). 40 H. inj m k/ kC D eq s V eq . inj m k/ eAVj nQ . inj m k/ eAVj nQ . j C m k/ eq m k/ eAVj nQ . j C m k/ !

Download PDF sample

Rated 4.71 of 5 – based on 27 votes