By Yoshihisa Yamamoto
This is often the 1st publication to study in systematic type the coherence, amplification and quantum results in semiconductor lasers. There are 3 significant sections within the textual content. the 1st offers with the applying of semiconductor lasers for coherent communique and spectroscopy, outlining the elemental spectral and modulation features of semiconductor lasers. Semiconductor laser amplifiers, really the Fabry-Perot hollow space amplifier, touring wave amplifiers and the injection-locked oscillator, are coated within the moment part which serves to show the benefits and difficulties of optical amplifier expertise. The 3rd part discusses the quantum results in semiconductor lasers, describing squeezed-state iteration and inhibition of spontaneous emission in addition to normal quantum noise homes. This part additionally examines new learn instructions in quantum optics and the opportunity of a noiseless and thresholdless semiconductor laser.
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Additional info for Coherence, Amplification, and Quantum Effects in Semiconductor Lasers
Koren, and B. I. 6 JLm InGaAs/lnGaAsP multiple-quantum-well distributed Bragg reftector laser," paper presented at 11th IEEE International Semiconductor Laser Conference, Boston, MA, Aug. 29-Sept. 1, 1988, Paper J-1. 17. L. D. Westbrook, D. M. Cooper, and P. C. Spurdens, "Measurements of linewidth enhancement, gain and spontaneous emission in InGaAs quantum well lasers with InGaAsP barriers," paper presented at 11th IEEE Intema- 76 LINE BROADENING OF SEMICONDUcrOR LASERS 73. C. H. Henry, "Spectral properties of semiconductor lasers," in SemIconductors and Semimetals, Vol.
26 shows that nsp = rig goes to 1 for energies several kT less than the laser photon energy and this ratio approaches 00 at hw = eV, where g = O. m InGaAsP material. 6 [14}. The parameter lisp tends to be small when the level of inversion is high. We can expect it to be between 1 and 2 for the relatively short lasers used in optical communications and also for lasers with small mode occupation factors f oct of the active layer. 2. 26. Absorption, emission, and gain spectra versus photon energy for a tJ-l-'m InGaAs laser.
7) we can subtract the incoming vacuum fluctuation VA,in' which is known from the fluctuation-dissipation theorem [1-3). To find the voltage amplitude VA in the presence of small source currents in the active regions and at the outputs, we need a multiport description. We therefore divide the laser in regions so small that the field can be considered as constant within each region. We will also need the voltage amplitudes V, at the locations of the source currents I,. 2. 3. The Modulated Field noting that the mUltiport is linear as defined, we write So far it has been understood that we have been dealing with monochromatic fields.