CMOS Mixed-Signal Circuit Design by R. Jacob Baker

By R. Jacob Baker

A massive continuation to CMOS: Circuit layout, structure, and Simulation the ability of mixed-signal circuit designs, and maybe the explanation they're exchanging analog-only designs within the implementation of analog interfaces, comes from the wedding of analog circuits with electronic sign processing. This ebook builds at the primary fabric within the author's earlier e-book, CMOS: Circuit layout, format, and Simulation, to supply a fantastic textbook and reference for mixed-signal circuit layout. The insurance is either useful and in-depth, integrating experimental, theoretical, and simulation examples to force domestic the why and the how of doing mixed-signal circuit layout.

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2. 4. 1 Electrons and holes in semiconductors In equilibrium, electrons and holes in an ideal crystalline semiconductor behave as ideal gases when the doping concentration is not too high (typically of the order of 1018 cm− 3 or less), as is the case for the bulk material of MOS devices [3]. 38 × 10–23 J/K is the Boltzmann constant and T is the absolute temperature in degrees Kelvin (K). 6 × 10–19 C is the electronic charge. Because of their negative charge, electrons are attracted to regions of higher electric potential.

8. 5 The three-terminal MOS structure and the unified charge-control model (UCCM) The MOS transistor needs contact regions, which must be of a type opposite to that of the substrate, to access the inversion channel. 3 is an intermediate stage in the development of transistor models. 5), repeated below, but for the electrons their concentration is now controlled by  −VC instead of . Thus, q p ¼ p0 eÀkT ¼ p0 eÀu ; n ¼ n0 e qðÀVC Þ kT ¼ n0 euÀuC : 35 Advanced MOS transistor modeling VG VC n+ p-type substrate Fig.

Moschytz, and B. Gilbert, Boston, MA: Kluwer, 2002, pp. 7–74. Y. Tsividis, Mixed Analog–Digital VLSI Devices and Technology: An Introduction, New York: McGraw-Hill, 1996. M. , New York: Dover Publications, 1989. R. S. Muller and T. I. Kamins with M. , New York: John Wiley & Sons, 2003. P. R. Gray, P. J. Hurst, S. H. Lewis, and R. G. , New York: John Wiley & Sons, 2001. W. Shockley, M. Sparks, and G. K. Teal, “p–n Junction transistors,” Physical Review, vol. 83, no. 1, pp. 151–162, July 1, 1951.

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