Advanced Gate Stacks for High-Mobility Semiconductors by S. Takagi (auth.), Dr. Athanasios Dimoulas, Evgeni Gusev,

By S. Takagi (auth.), Dr. Athanasios Dimoulas, Evgeni Gusev, Professor Paul C. McIntyre, Professor Marc Heyns (eds.)

Will nanoelectronic units proceed to scale in response to Moore’s legislation? At this second, there's no effortless resolution seeing that gate scaling is quickly rising as a major roadblock for the evolution of CMOS know-how. Channel engineering in keeping with high-mobility semiconductor fabrics (e.g. strained Si, replacement orientation substrates, Ge or III-V compounds) might aid conquer the hindrances considering that they give functionality enhancement. There are a number of matters although. can we know the way to make advanced engineered substrates (e.g. Germanium-on-Insulator)? that are the simplest interface passivation methodologies and (high-k) gate dielectrics on Ge and III-V compounds? do we strategy those fabrics briefly channel transistors utilizing flows, toolsets and understand how just like that during Si expertise? How do those fabrics and units behave on the nanoscale? The reader gets a transparent view of what has been performed thus far, what's the state of the art and that are the most demanding situations forward ahead of we come any on the subject of a practicable Ge and III-V MOS technology.

Show description

Read or Download Advanced Gate Stacks for High-Mobility Semiconductors PDF

Best semiconductors books

Semiconductor Quantum Optics

Optical communications expertise is becoming more and more in significance, with a fast speed of improvement. leading edge optical units have emerged from the combination of semiconductor laser diodes with optical waveguide expertise. This well-researched textual content lines the evolution of semiconductor laser amplifiers (SLAs) from those applied sciences.

Advanced Gate Stacks for High-Mobility Semiconductors

Will nanoelectronic units proceed to scale in keeping with Moore’s legislation? At this second, there is not any effortless solution in view that gate scaling is swiftly rising as a significant roadblock for the evolution of CMOS expertise. Channel engineering according to high-mobility semiconductor fabrics (e. g. strained Si, substitute orientation substrates, Ge or III-V compounds) may aid triumph over the stumbling blocks given that they provide functionality enhancement.

Complex Plasmas: Scientific Challenges and Technological Opportunities

This publication offers the reader with an creation to the physics of advanced plasmas, a dialogue of the explicit medical and technical demanding situations they current and an summary in their power technological purposes. advanced plasmas vary from traditional high-temperature plasmas in different methods: they might include extra species, together with nano meter- to micrometer-sized debris, destructive ions, molecules and radicals and so they could express robust correlations or quantum results.

Additional resources for Advanced Gate Stacks for High-Mobility Semiconductors

Example text

1612 (2001) 44. T. Mizuno, N. Sugiyama, T. Tezuka, and S. Takagi, IEEE Trans. Electron Devices 50, p. 988 (2003) 45. W. T. L. -Y. A. A. Fitzgerald, J. Appl. Phys. 92, p. 3745 (2002) 46. R. Oberhuber, G. Zandler and P. Vogl, Phys. Rev. B 58, 9941 (1998) 47. H. Nakatsuji, Y. Kamakura and K. Taniguchi, Int. Electron Devices Meet. Tech. , San Francisco, p. 727 (2002) 48. T. Mizuno, N. Sugiyama, T. Tezuka, T. Numata, T. Maeda and S. Takagi, Int. Electron Devices Meet. Tech. , San Francisco, p. 31 (2002) 49.

11. 12. 13. A. Antoniadis, Proc. VLSI Symposium, Honolulu, p. net/ F. Schaffler, Semicond. Sci. Technol. 12, p. K. K. Bera and S. Chattopadhyay, Semicond. Sci. Technol. 13, p. K. B. K. Ray, “Strained silicon heterostructures: materials and devices” – (IEE circuits, devices and systems series; No. L. A. T. T. Currie and A. Lochtefeld, J. Appl. Phys. 97, 011101 (2005) S. Thompson, N. Anand, M. Armstrong, C. Auth, B. Arcot, M. Alavi, P. Bai, J. Bielefeld, R. Bigwood, J. Brandenburg, M. Buehler, S. Cea, V.

Nguyen, H. Pearson, T. Sandford, R. Schweinfurth, R. Shaheed, S. Sivakumar, M. Taylor, B. Tufts, C. Wallace, P. Wang, C. Weber, and M. Bohr: Int. Electron Devices Meet. Tech. , San Francisco, p. 61 (2002) K. Natori, J. Appl. , 76, p. S. Lundstrom, IEEE Electron Device Lett. 18, p. S. Lundstrom, IEEE Electron Device Lett. 293 (2001) K. L. F. Gibbons, IEEE Trans. Electron Devices, 47, p. 1406 (2000) R. Ohba and T. Mizuno, IEEE Trans. Electron Devices 48, p. 338 (2001) A. A. , p. 591 (2001) 16 14.

Download PDF sample

Rated 4.24 of 5 – based on 34 votes