By Mircea Dragoman, Daniela Dragoman
This e-book is devoted to the recent two-dimensional one-atomic-layer-thick fabrics resembling graphene, steel chalcogenides, silicene and different 2nd fabrics. The e-book describes their major actual houses and functions in nanoelctronics, photonics, sensing and computing. a wide a part of the publication bargains with graphene and its notable actual homes. one other very important a part of the booklet offers with semiconductor monolayers akin to MoS2 with extraordinary functions in photonics, and electronics. Silicene and germanene are the atom-thick opposite numbers of silicon and germanium with awesome functions in electronics and photonics that are nonetheless unexplored. attention of two-dimensional electron fuel units finish the therapy. The physics of 2DEG is defined intimately and the purposes in THz and IR area are discussed.
Both authors are operating at the moment on those second fabrics constructing concept and applications.
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Extra resources for 2D Nanoelectronics: Physics and Devices of Atomically Thin Materials
2011). This extraordinary stability is due to the thermal properties of graphene, temperatures as high as 900 K being not sufﬁcient to break the carbon-carbon bonds. 4, respectively. Cr/Au Graphene Si3N4 SiO2 n/p type Si Doped Si Fig. 52 The bilayer graphene/Si/SiO2/Si3N4/Cr/Au diode V 46 1 2D Carbon-Based Nanoelectronics Ohmic contact Ti/Al/Ni/Au CVD graphene Cr/Au SiO2 Sapphire/n-GaN Fig. 53 The graphene/n-GaN diode The graphene diodes presented above have DC characteristics that can be changed under the influence of various adsorbates, such as liquids and gases.
2010) are about 200 cm2/V s for holes and 90 cm2/ V s for electrons. 6 cm (see Fig. 39, where l0 is the mobility for a straight substrate). Besides mobility, the on-current of the flexible graphene FET does not show signiﬁcant difference when the substrate is considerably bent. Graphene FETs on flexible substrates display excellent performances when working as RF FETs. For example, in a bottom gate conﬁguration, as that illustrated in Fig. 25% (Petrone et al. 6 GHz. In this case, the oxide is 6 nm thick and was deposited by ALD at 150 °C on a PEN substrate.
The last shape is the most common one and is illustrated in Fig. 46. Such nonlinear current-voltage dependence is used in oscillators to generate oscillations at a certain frequency, but also for multiplication or detection purposes. NDR was observed in graphene/h-BN/graphene tunneling transistors, where the carriers tunnel through the h-BN insulator. The vertical graphene/h-BN/graphene structure is deposited over SiO2/doped Si, the Si layer acting as backgate. In this case the NDR shape can be tuned by the backgate voltage.